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% ? absolute maximum ratings t a = 25c unless otherwise noted symbol parameter FDT439N units v dss drain-source voltage 30 v v gss gate-source voltage 8v i d drain current - continuous (note 1a) 6.3 a - pulsed 20 p d power dissipation for single operation (note 1a) 3w (note 1b) 1.3 (note 1c) 1.1 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r jc thermal resistance, junction-to-case (note 1) 12 c/w package marking and ordering information device marking device reel size tape width quantity FDT439N FDT439N 13 ?? 12mm 2500 units g d s d sot-223 d ds g g d s sot-223 * (j23z) d s g

electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 40 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.4 0.67 1 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -2.2 mv/ c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 6.3 a v gs = 4.5 v, i d = 6.3 a, t j =125 c v gs = 2.5 v, i d = 5.5a 0.038 0.055 0.048 0.045 0.072 0.058 ? i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v 10 a g fs forward transconductance v ds = 5 v, i d = 6.3 a 17 s dynamic characteristics c iss input capacitance 500 pf c oss output capacitance 185 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 43 pf switching characteristics (note 2) t d(on) turn-on delay time 6 12 ns t r turn-on rise time 10 18 ns t d(off) turn-off delay time 30 48 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? 10 18 ns q g total gate charge 10.7 15 nc q gs gate-source charge 0.9 nc q gd gate-drain charge v ds = 15 v, i d = 6.3 a, v gs = 4.5 v, 3.7 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 2.5 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.5 a (note 2) 0.8 1.2 v

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! " # $ %& ! 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 6.3a v gs = 4.5v 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 3.2a t a = 125 o c t a = 25 o c 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 121620 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 2.5v 3.0v 3.5v 4.5v 0 4 8 12 16 20 01234 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 4.5v 3.0v 2.5v 2.0v 1.5v 0 4 8 12 16 20 00.511.522.53 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v

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0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 110 c/w t - t = p * r (t) a j p(pk) t 1 t 2 ja ja ja ja 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100ms 10ms 1ms 100 ja = 110 o c/w t a = 25 o c 10s 0 1 2 3 4 5 024681012 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 6.3a v ds = 5v 10v 15v 0 300 600 900 1200 1500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 110 o c/w t a = 25 o c
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